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d a t a sh eet product speci?cation supersedes data of september 1990 file under integrated circuits, ic03 1996 apr 04 integrated circuits TEA1066T versatile telephone transmission circuit with dialler interface
1996 apr 04 2 philips semiconductors product speci?cation v ersatile telephone transmission circuit with dialler interface TEA1066T features voltage regulator with adjustable static resistance provides supply for external circuitry symmetrical low-impedance inputs for dynamic and magnetic microphones symmetrical high-impedance inputs for piezoelectric microphone asymmetrical high-impedance input for electret microphone dual-tone multi-frequency (dtmf) signal input with confidence tone mute input for pulse or dtmf dialling power down input for pulse dial or register recall receiving amplifier for magnetic, dynamic or piezoelectric earpieces large gain setting range on microphone and earpiece amplifiers line loss compensation facility, line current dependent (microphone and earpiece amplifiers) gain control adaptable to exchange supply dc line voltage adjustment facility. general description the TEA1066T is a bipolar integrated circuit that performs all speech and line interface functions required in fully electronic telephone sets. the circuit performs electronic switching between dialling and speech. quick reference data ordering information symbol parameter conditions min. typ. max. unit v ln line voltage i line = 15 ma 4.25 4.45 4.65 v i line line current normal operation 10 - 140 ma i cc internal supply current power down input low - 0.96 1.3 ma power down input high - 55 82 m a v cc supply voltage for peripherals i line = 15 ma; mute input high; i p = 1.2 ma 2.8 3.05 - v i line = 15 ma; mute input high; i p = 1.7 ma 2.5 - - v g v voltage gain range for microphone ampli?er low impedance inputs (pins 7 and 9) 44 - 60 db high impedance inputs (pins 8 and 10) 30 - 46 db receiving amplifier 17 - 39 db t amb operating ambient temperature - 25 - +75 c line loss compensation d g v gain control 5.5 5.9 6.3 db v exch exchange supply voltage 24 - 60 v r exch exchange feeding bridge resistance 400 - 1000 w type number package name description version TEA1066T so20 plastic small outline package; 20 leads; body width 7.5 mm sot163-1
1996 apr 04 3 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T block diagram fig.1 block diagram. the blocks marked db are attenuators. handbook, full pagewidth mea009 - 1 db db supply and reference agc circuit slpe stab agc reg v ee current reference 14 18 19 12 16 15 7 8 10 9 13 17 1 6 5 4 11 20 ir micl + mich + mich - micl - dtmf mute pd v cc TEA1066T ln gar 2 gas1 3 gas2 qr + qr -
1996 apr 04 4 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T pinning symbol pin description ln 1 positive line terminal gas1 2 gain adjustment transmitting ampli?er gas2 3 gain adjustment transmitting ampli?er qr - 4 inverting output receiving ampli?er qr+ 5 non-inverting output receiving ampli?er gar 6 gain adjustment receiving ampli?er micl - 7 inverting microphone input, low impedance mich - 8 inverting microphone input, high impedance micl+ 9 non-inverting microphone input, low impedance mich+ 10 non-inverting microphone input, high impedance stab 11 current stabilizer v ee 12 negative line terminal ir 13 receiving ampli?er input pd 14 power-down input dtmf 15 dual-tone multi-frequency input mute 16 mute input v cc 17 supply voltage decoupling reg 18 voltage regulator decoupling agc 19 automatic gain control input slpe 20 slope (dc resistance) adjustment fig.2 pin configuration. handbook, halfpage 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 mbh120 TEA1066T ln gas1 gas2 qr - qr + gar micl - mich - micl + slpe agc reg v cc ir dtmf v ee mute pd stab mich + functional description supplies: v cc , ln, slpe, reg and stab power for the TEA1066T and its peripheral circuits is usually obtained from the telephone line. the TEA1066T develops its own supply voltage at v cc and regulates its voltage drop. the supply voltage v cc may also be used to supply external peripheral circuits, e.g. dialling and control circuits. the supply has to be decoupled by connecting a smoothing capacitor between v cc and v ee ; the internal voltage regulator has to be decoupled by a capacitor from reg to v ee . an internal current stabilizer is set by a resistor of 3.6 k w between stab and v ee . the dc current flowing into the set is determined by the exchange supply voltage (v exch ), the feeding bridge resistance (r exch ), the dc resistance of the telephone line (r line ) and the dc voltage on the subscriber set (see fig.7). if the line current i line exceeds the current i cc + 0.5 ma required by the circuit itself (approximately 1 ma) plus the current i p required by the peripheral circuits connected to v cc , then the voltage regulator diverts the excess current via ln.
1996 apr 04 5 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T the voltage regulator adjusts the average voltage on ln to: v ln = v ref + i slpe r9 or v ln = v ref + (i line - i cc - 0.5 10 - 3 a - i p ) r9 where v ref is an internally generated temperature compensated reference voltage of 4.2 v and r9 is an external resistor connected between slpe and v ee . the preferred value for r9 is 20 w. changing the value of r9 will also affect microphone gain, dtmf gain, gain control characteristics, side-tone level and the maximum output swing on ln. under normal conditions, when i slpe >> i cc + 0.5 ma + i p , the static behaviour of the circuit is that of a 4.2 v regulator diode with an internal resistance equal to that of r9. in the audio frequency range, the dynamic impedance is largely determined by r1 (see fig.3). the internal reference voltage can be adjusted by means of an external resistor r va . this resistor, connected between ln and reg (pins 1 and 18), will decrease the internal reference voltage; when connected between reg and slpe (pins 18 and 20) it will increase the internal reference voltage. current i p , available from v cc for supplying peripheral circuits, depends on external components and on the line current. figure 8 shows this current for v cc > 2.2 v fig.3 equivalent impedance circuit. r p = 17.5 k w l eq = c3 r9 r p handbook, halfpage reg v ee v cc ln mba454 l eq r p r1 v ref r9 20 w c3 4.7 m f c1 100 m f and > 3 v, this being the minimum supply voltage for most cmos circuits, including voltage drop for an enable diode. if mute is low, the available current is further reduced when the receiving amplifier is driven. microphone inputs micl+, mich+, micl - and mich - and ampli?cation adjustment connections gas1 and gas2 the TEA1066T has symmetrical microphone inputs. the micl+ and micl - inputs are intended for low-sensitivity, low-impedance dynamic or magnetic microphones. the input impedance is 8.2 k w (2 4.1 k w ) and its voltage gain is typically 52 db. the mich+ and mich - inputs are intended for a piezoelectric microphone or an electret microphone with a built-in fet source follower. its input impedance is 40.8 k w (2 20.4 k w ) and its voltage gain is typical 38 db. the arrangements with the microphone types mentioned are shown in fig.9. the gain of the microphone amplifier in both types can be adjusted over a range of 8 db to suit the sensitivity of the transducer used. the gain is proportional to external resistor r7 connected between gas1 and gas2. an external capacitor c6 of 100 pf between gas1 and slpe is required to ensure stability. a larger value may be chosen to obtain a first-order low-pass filter. the cut-off frequency corresponds with the time constant r7 c6. mute input mute a high level at mute enables the dtmf input and inhibits the microphone inputs and the receiving amplifier; a low level or an open circuit has the reverse effect. switching the mute input will cause negligible clicks at the earpiece outputs and on the line. dual-tone multi frequency input dtmf when the dtmf input is enabled, dialling tones may be sent onto the line. the voltage gain from dtmf to ln is typically 25.5 db and varies with r7 in the same way as the gain of the microphone amplifier. the signalling tones can be heard in the earpiece at a low level (confidence tone). receiving ampli?er: ir, qr+, qr - and gar the receiving amplifier has one input ir and two complementary outputs, a non-inverting output qr+ and an inverting output qr - .
1996 apr 04 6 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T these outputs may be used for single-ended or for differential drive, depending on the sensitivity and type of earpiece used (see fig.10). gain from ir to qr+ is typically 25 db. this will be sufficient for low-impedance magnetic or dynamic earpieces, which are suited for single-ended drive. by using both outputs (differential drive), the gain is increased by 6 db and differential drive becomes possible. this feature can be used when the earpiece impedance exceeds 450 w (high-impedance dynamic, magnetic or piezoelectric earpieces). the output voltage of the receiving amplifier is specified for continuous-wave drive. the maximum output voltage will be higher under speech conditions, where the ratio of peak to rms value is higher. the receiving amplifier gain can be adjusted over a range of 8 db to suit the sensitivity of the transducer used. the gain is set by the external resistor r4 connected between gar and qr+. two external capacitors, c4 = 100 pf and c7 = 10 c4 = 1 nf, are necessary to ensure stability. a larger value of c4 may be chosen to obtain a first-order, low-pass filter. the cut-off frequency corresponds with the time constant r4 c4. automatic gain control input agc automatic line loss compensation is obtained by connecting a resistor r6 between agc and v ee . this automatic gain control varies the microphone amplifier gain and the receiving amplifier gain in accordance with the dc line current. the control range is 6 db. this corresponds with a line length of 5 km for a 0.5 mm diameter copper twisted-pair cable with a dc resistance of 176 w /km and an average attenuation of 1.2 db/km. resistor r6 should be chosen in accordance with the exchange supply voltage and its feeding bridge resistance (see fig.11 and table 1). different values of r6 give the same ratio of line currents for start and end of the control range. if automatic line loss compensation is not required, agc may be left open. the amplifiers then all give their maximum gain as specified. power-down input pd during pulse dialling or register recall (timed loop break) the telephone line is interrupted, as a consequence it provides no supply for the transmission circuit and the peripherals connected to v cc . these gaps have to be bridged by the charge in the smoothing capacitor c1. the requirements on this capacitor are relaxed by applying a high level to the pd input during the time of the loop break, which reduces the supply current from typically 1 ma to typically 55 m a. a high level at pd further disconnects the capacitor at reg, with the effect that the voltage stabilizer will have no switch-on delay after line interruptions. this results in no contribution of the ic to the current waveform during pulse dialling or register recall. when this facility is not required pd may be left open. side-tone suppression suppression of the transmitted signal in the earpiece is obtained by the anti-side-tone network consisting of r1//z line , r2, r3, r8, r9 and z bal (see fig.14). maximum compensation is obtained when the following conditions are fulfilled: (1) (2) if fixed values are chosen for r1, r2, r3, and r9, then condition (1) will always be fulfilled, provided that ? r8//z bal ? < r3. to obtain optimum side-tone suppression, condition (2) has to be fulfilled, resulting in: z bal = (r8/r1) z line = k z line , where k is a scale factor: k = (r8/r1). scale factor k (dependent on the value of r8) must be chosen to meet the following criteria: 1. compatibility with a standard capacitor from the e6 or e12 range for z bal 2. ? z bal //r8 ? << r3 3. ? z bal + r8 ? >> r9. in practice, z line varies greatly with line length and cable type; consequently, an average value has to be chosen for z bal . the suppression further depends on the accuracy with which z bal /k equals the average line impedance. example: the balanced line impedance ? z bal ? at which the optimum suppression is preset can be calculated by: assume z line = 210 w + (1265 w /140 nf), representing a 5 km line of 0.5 mm diameter, copper, twisted-pair cable matched to 600 w (176 w /km; 38 nf/km). when k = 0.64, then r8 = 390 w ; z bal = 130 w + (820 w //220 nf). the anti-side-tone network for the tea1060 family shown in fig.4 attenuates the signal received from the line by 32 db before it enters the receiving amplifier. r9 r2 r1 r3 r8//z bal [ ] + ( ) = z bal z bal r8 + ( ) z line z line r1 + ( ) =
1996 apr 04 7 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T the attenuation is almost constant over the whole audio frequency range. figure 5 shows a conventional wheatstone bridge anti-side-tone circuit that can be used as an alternative. both bridge types can be used with either resistive or complex set impedances. the anti-side-tone network as used in the standard application (see fig.13) attenuates the signal from the line with 32 db. the attenuation is nearly flat over the audio-frequency range. instead of the previously-described special tea1066 bridge, the conventional wheatstone bridge configuration can be used as an alternative anti-side-tone circuit. both bridge types can be used with either a resistive set impedance or a complex set impedance. fig.4 equivalent circuit of tea1060 family anti-side-tone bridge. handbook, full pagewidth msa500 - 1 ir r3 r8 slpe r9 z line v ee z bal i m r t r1 r2 ln fig.5 equivalent circuit of an anti-side-tone network in a wheatstone bridge configuration. handbook, full pagewidth msa501 - 1 ir r8 slpe r9 r1 ln z line v ee z bal r a i m r t
1996 apr 04 8 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T limiting values in accordance with the absolute maximum rating system (iec 134). notes 1. mostly dependent on the maximum required t amb and on the voltage between ln and slpe (see fig.6). 2. calculated for the maximum ambient temperature specified, t amb = 75 c and a maximum junction temperature of 125 c. thermal characteristics symbol parameter conditions min. max. unit v ln positive continuous line voltage - 12 v v ln(r) repetitive line voltage during switch-on or line interruption - 13.2 v v ln(rm) repetitive peak line voltage for a 1 ms pulse per 5 s r9 = 20 w ; r10 = 13 w; ( fig.10) - 28 v i line line current r9 = 20 w ; note 1 - 140 ma v n voltage on any other pin v ee - 0.7 v cc + 0.7 v p tot total power dissipation r9 = 20 w ; note 2 - 555 mw t stg ic storage temperature - 40 +125 c t amb operating ambient temperature - 25 +75 c t j junction temperature - 125 c symbol parameter value unit r th j-a thermal resistance from junction to ambient in free air mounted on glass epoxy board 41 19 1.5 mm 90 k/w
1996 apr 04 9 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T characteristics i line = 10 to 100 ma; v ee = 0 v; f = 800 hz; r9 = 20 w ; t amb = 25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supplies: ln and v cc (pins 1 and 17) v ln voltage drop over circuit between ln and v ee i line = 5 ma 3.95 4.25 4.55 v i line = 15 ma 4.25 4.45 4.65 v i line = 100 ma 5.40 6.10 6.70 v i line = 140 ma - - 7.50 v d v ln / d t voltage drop variation with temperature i line = 15 ma - 4 - 2 0 mv/k v ln voltage drop over circuit between ln and v ee with external resistor r va i line = 15 ma; r va = r1-18 = 68 k w 3.50 3.80 4.05 v i line = 15 ma; r va = r18-20 = 39 k w 4.70 5 5.30 v i cc supply current pd = low; v cc = 2.8 v - 0.96 1.30 ma pd = high; v cc = 2.8 v - 55 82 m a v cc supply voltage available for peripheral circuits i line = 15 ma; mute = high; i p = 0 ma 3.50 3.75 - v i line = 15 ma; mute = high; i p = 1.2 ma 2.80 3.05 - v fig.6 safe operating area. handbook, halfpage 2 12 150 30 70 110 mbh125 4 6 8 10 130 90 50 i ln (ma) (1) (2) (3) (4) v ln - v slpe (v) (1) t amb = 45 c; p tot = 888 mw. (2) t amb = 55 c; p tot = 777 mw. (3) t amb = 65 c; p tot = 666 mw. (4) t amb = 75 c; p tot = 555 mw.
1996 apr 04 10 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T microphone inputs micl+ and micl -; mich+ and mich - ? z i ? input impedance micl+ (pin 9); micl - (pin 7) 3.3 4.1 4.9 k w mich+ (pin 10); mich - (pin 8) 16.5 20.4 24.5 k w cmrr common mode rejection ratio - 82 - db g v voltage gain i line = 15 ma; r7 = 68 w micl+/micl - to ln 51 52 53 db mich+/mich - to ln 37 38 39 db d g vf gain variation with frequency at f = 300 hz and 3400 hz with respect to 800 hz - 0.5 0.2 +0.5 db d g vt gain variation with temperature at t amb = - 25 c and +75 c i line = 50 ma; with respect to 800 hz - 0.2 - db dual-tone multi-frequency input dtmf (pin 15) ? z i ? input impedance 16.8 20.7 24.6 k w g v voltage gain from dtmf to ln i line = 15 ma; r7= 68 k w 24.5 25.5 26.5 db d g vf gain variation with frequency at f = 300 hz and 3400 hz with respect to 800 hz - 0.5 0.2 +0.5 db d g vt gain variation with temperature at t amb = - 25 c and +75 c i line = 50 ma; with respect to 25 c - 0.2 - db gain adjustment connections gas1 and gas2 (pins 2 and 3) d g v gain variation with r7, transmitting ampli?er - 8 - +8 db transmitting ampli?er output ln (pin 1) v ln(rms) output voltage (rms value) i line = 15 ma; thd = 2% 1.9 2.3 - v i line = 15 ma; thd = 10% - 2.6 - v v no(rms) noise output voltage (rms value) i line = 15 ma; r7 = 68 k w ; microphone inputs open; psophometrically weighted (p53 curve) - - 70 - dbmp receiving ampli?er input ir (pin 13) ? z i ? input impedance 17 21 25 k w receiving ampli?er outputs qr+ and qr - (pins 5 and 4) ? z o ? output impedance single-ended - 4 - w g v voltage gain from ir to qr+ or qr - i line = 15 ma; r4 = 100 k w single-ended; r l = 300 w 24 25 26 db differential; r l = 600 w 30 31 32 db d g vf gain variation with frequency at f = 300 hz and 3400 hz with respect to 800 hz - 0.5 0.2 +0.5 db d g vt gain variation with temperature at t amb = - 25 c and +75 c i line = 50 ma; with respect to 25 c - 0.2 - db symbol parameter conditions min. typ. max. unit
1996 apr 04 11 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T v o(rms) output voltage (rms value) sine-wave drive; i line = 15 ma; i p = 0 ma; thd = 2%; r4 = 100 k w single-ended; r l = 150 w 0.30 0.38 - v single-ended; r l = 450 w 0.40 0.52 - v differential; c l = 47 nf; r series = 100 w ; f = 3400 hz 0.80 1.0 - v v no(rms) noise output voltage (rms value) i line = 15 ma; r4 = 100 k w; pin 13 (ir) open; psophometrically weighted (p53 curve) single-ended; r l = 300 w - 50 - m v differential; r l = 600 w - 100 - m v gain adjustment gar (pin 6) d g v gain variation with r4 connected between pin 6 and pin 5 receiving ampli?er - 8 - +8 db mute input (pin 16) v ih high level input voltage 1.50 - v cc v v il low level input voltage - - 0.3 v i mute input current - 5 10 m a d g v voltage gain reduction between micl+ (pin 9) and micl - (pin 7) to ln (pin 1) mute = high - 70 - db g v voltage gain from dtmf to qr+ or qr - mute = high; r4 = 100 k w ; single-ended; r l = 300 w - 21 - 19 - 17 db power-down input pd (pin 14) v ih high level input voltage 1.5 - v cc v v il low level input voltage - - 0.3 v i pd input current in power-down condition - 5 10 m a symbol parameter conditions min. typ. max. unit
1996 apr 04 12 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T automatic gain control input agc (pin 19) d g v gain control range from ir to qr+/qr - and from mic+/mic - to ln i line = 70 ma; r6 = 110 k w between agc and v ee - 5.5 - 5.9 - 6.3 db i line(h) highest line current for maximum gain r6 = 110 k w between agc and v ee - 23 - ma i line(l) lowest line current for minimum gain r6 = 110 k w between agc and v ee - 61 - ma d g v voltage gain variation between i line = 15 ma and i line = 35 ma; r6 = 110 k w between agc and v ee - 1.0 - 1.5 - 2.0 db symbol parameter conditions min. typ. max. unit fig.7 supply arrangement. handbook, full pagewidth mbh123 slpe stab reg v ee v cc i p ln 1 17 20 12 18 11 TEA1066T slpe i ac dc peripheral circuits c1 0.5 ma i slpe + 0.5 ma r line r exch v exch i line r1 i cc c3 r5 r9
1996 apr 04 13 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T fig.8 typical current i p available from v cc for external (peripheral) circuitry with v cc > 2.2 v and v cc > 3 v. curves (1) and (3) are valid when the receiving amplifier is not driven or when mute = high. curves (2) and (4) are valid when mute = low and the receiving amplifier is driven, v o(rms) = 150 mv, r l = 150 w (asymmetrical). i line = 15 ma; v ln = 4.45 v; r1 = 620 w and r9 = 20 w . (1) i p = 2.55 ma. (2) i p = 2.1 ma. (3) i p = 1.2 ma. (4) i p = 0.75 ma. handbook, halfpage 0 1 (1) (2) (3) (4) i p (ma) 2 4 v cc (v) 3 0 1 2 mbh124 3 fig.9 alternative microphone arrangements. (1) may be connected to lower the terminating impedance. a. magnetic or dynamic microphone. b. electret microphone. c. piezoelectric microphone. handbook, full pagewidth mbh121 v ee v cc mich + mich - (1) 17 12 10 8 mich - mich + 8 10 micl - micl + 7 9
1996 apr 04 14 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T fig.10 alternative receiver arrangements. a. dynamic earpiece with less than 450 w impedance. b. dynamic earpiece with more than 450 w impedance. c. magnetic earpiece with more than 450 w impedance. d. piezoelectric earpiece. handbook, full pagewidth (1) mbh122 (2) qr + 5 qr - 4 qr + 5 qr - 4 qr + 5 qr - 4 qr + 5 v ee qr - 4 12 (1) may be connected to prevent distortion (inductive load). (2) required to increase the phase margin (capacitive load). fig.11 variation of gain with line current, with r6 as a parameter. handbook, full pagewidth mbh126 - 6 - 4 - 2 0 140 120 100 80 60 40 20 0 78.7 k w 48.7 k w 110 k w 140 k w r6 = i line (ma) d g v (db) r9 = 20 w .
1996 apr 04 15 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T table 1 values of resistor r6 for optimum line loss compensation, for various usual values of exchange supply voltage v exch and exchange feeding bridge resistance r exch ; r9 = 20 w v exch (v) r6 (k w ) r exch = 400 w r exch = 600 w r exch = 800 w r exch = 1000 w 24 61.9 48.7 x x 36 100 78.7 68 60.4 48 140 110 93.1 82 60 x x 120 102 fig.12 test circuit for defining voltage gain of micl+, micl - , mich+ and mich - dtmf inputs. voltage gain is defined as: g v = 20 log ? v o /v i ? . for measuring the gain from micl+, micl - or mich+ and mich -, the mute input should be low or open; for measuring the dtmf input, mute should be high. inputs not under test should be open. handbook, full pagewidth i line mbh127 r6 r5 3.6 k w r9 20 w 20 slpe stab agc reg v ee 12 18 11 19 gas2 gas1 2 3 r7 68 k w r4 100 k w c4 100 pf c7 1 nf c6 100 pf 100 m f r l 600 w v o v cc 17 1 ln r1 620 w 10 to 140 ma 10 m f v i c1 100 m f v i 7, 8 9, 10 13 15 16 ir micl + /mich + micl - /mich - dtmf mute 14 pd TEA1066T qr + gar 5 qr - 4 6 c3 4.7 m f
1996 apr 04 16 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T fig.13 test circuit for defining voltage gain of the receiving amplifier. voltage gain is defined as: g v = 20 log ? v o /v i ? . handbook, full pagewidth mbh128 r6 r7 c6 100 pf 17 1 r1 i line 10 to 140 ma c1 c4 100 pf c7 1 nf r5 3.6 k w r9 20 w r4 100 k w 100 m f 600 w 620 w 10 m f 100 m f c3 4.7 m f 20 slpe stab agc reg v ee 12 18 11 19 gas2 gas1 2 3 v cc ln 7, 8 9, 10 13 15 16 ir micl + /mich + micl - /mich - dtmf mute 14 pd TEA1066T qr + gar 5 qr - 4 6 z l v o v i
1996 apr 04 17 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T application information typical application of the tea1066, shown with a piezoelectric earpiece and dtmf dialling. the bridge to the left and r10 limit the current into the circuit and the voltage across the circuit during line transients. pulse dialling or register recall require a different protection arrangement. handbook, full pagewidth mbh129 slpe gas1 gas2 c6 100 pf r8 390 w 20 micl - /mich - micl + /mich + gar qr + qr - 7, 8 9, 10 c4 100 pf c5 100 nf 6 5 4 1 17 ir 13 2 3 reg 18 r7 agc 19 r6 stab 11 v ee 12 14 c3 4.7 m f r5 3.6 k w r1 ln v cc 620 w r9 20 w pd 15 dtmf 16 mute 1 nf c7 r4 bzw14 (2x) bas11 (2x) r11 r3 3.92 k w r2 130 k w r10 13 w z bal TEA1066T c1 100 m f from dial and control circuits telephone line fig.14 application diagram.
1996 apr 04 18 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T handbook, full pagewidth mea008 - 1 telephone line cradle contact TEA1066T ln v cc dtmf tone mute pd dp/flo v ee v ss v dd m1 pcd3310 bsn254a fig.15 dtmf pulse set with cmos pcd3310 dialling circuit. the dashed lines show an optional flash (register recall by timed loop break).
1996 apr 04 19 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T package outline unit a max. a 1 a 2 a 3 b p c d (1) e (1) (1) e h e l l p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot163-1 92-11-17 95-01-24 10 20 w m b p detail x z e 11 1 d y 0.25 075e04 ms-013ac pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.51 0.49 0.30 0.29 0.050 1.4 0.055 0.42 0.39 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale x q a a 1 a 2 h e l p q e c l v m a (a ) 3 a so20: plastic small outline package; 20 leads; body width 7.5 mm sot163-1
1996 apr 04 20 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1996 apr 04 21 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1996 apr 04 22 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T notes
1996 apr 04 23 philips semiconductors product speci?cation versatile telephone transmission circuit with dialler interface TEA1066T notes
philips semiconductors C a worldwide company argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. (02) 805 4455, fax. (02) 805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. (01) 60 101-1256, fax. (01) 60 101-1250 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. (172) 200 733, fax. (172) 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. (359) 2 689 211, fax. (359) 2 689 102 canada: philips semiconductors/components: tel. (800) 234-7381, fax. (708) 296-8556 chile: see south america china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. (852) 2319 7888, fax. (852) 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. (032) 88 2636, fax. (031) 57 1949 finland: sinikalliontie 3, fin-02630 espoo, tel. (358) 0-615 800, fax. (358) 0-61580 920 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. (01) 4099 6161, fax. (01) 4099 6427 germany: p.o. box 10 51 40, 20035 hamburg, tel. (040) 23 53 60, fax. (040) 23 53 63 00 greece: no. 15, 25th march street, gr 17778 tavros, tel. (01) 4894 339/4894 911, fax. (01) 4814 240 hungary: see austria india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, bombay 400 018 tel. (022) 4938 541, fax. (022) 4938 722 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. (01) 7640 000, fax. (01) 7640 200 israel: rapac electronics, 7 kehilat saloniki st, tel aviv 61180, tel. (03) 645 04 44, fax. (03) 648 10 07 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. (0039) 2 6752 2531, fax. (0039) 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. (03) 3740 5130, fax. (03) 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. (02) 709-1412, fax. (02) 709-1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. (03) 750 5214, fax. (03) 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. 9-5(800) 234-7831, fax. (708) 296-8556 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. (040) 2783749, fax. (040) 2788399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. (09) 849-4160, fax. (09) 849-7811 norway: box 1, manglerud 0612, oslo, tel. (022) 74 8000, fax. (022) 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. (63) 2 816 6380, fax. (63) 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. (022) 612 2831, fax. (022) 612 2327 portugal: see spain romania: see italy singapore: lorong 1, toa payoh, singapore 1231, tel. (65) 350 2000, fax. (65) 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. (011) 470-5911, fax. (011) 470-5494 south america: rua do rocio 220 - 5th floor, suite 51, cep: 04552-903-s?o paulo-sp, brazil, p.o. box 7383 (01064-970), tel. (011) 821-2333, fax. (011) 829-1849 spain: balmes 22, 08007 barcelona, tel. (03) 301 6312, fax. (03) 301 4107 sweden: kottbygatan 7, akalla. s-16485 stockholm, tel. (0) 8-632 2000, fax. (0) 8-632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. (01) 488 2211, fax. (01) 481 77 30 taiwan: philips taiwan ltd., 23-30f, 66, chung hsiao west road, sec. 1, p.o. box 22978, taipei 100, tel. (886) 2 382 4443, fax. (886) 2 382 4444 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. (66) 2 745-4090, fax. (66) 2 398-0793 turkey : talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. (0212) 279 2770, fax. (0212) 282 6707 ukraine: philips ukraine, 2a akademika koroleva str., office 165, 252148 kiev, tel. 380-44-4760297, fax. 380-44-4766991 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. (0181) 730-5000, fax. (0181) 754-8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. (800) 234-7381, fax. (708) 296-8556 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. (381) 11 825 344, fax. (359) 211 635 777 internet: http://www .semiconductors.philips.com/ps/ for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p .o. box 218, 5600 md eindhoven, the netherlands, fax. +31-40-2724825 scds48 ? philips electronics n.v . 1996 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. printed in the netherlands 417021/10/02/pp24 date of release: 1996 apr 04 document order number: 9397 750 00783

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